Ultimate RF Performance Potential of Carbon Electronics Special Issue on Radio-Frequency Nanoelectronics

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 59; no. 10; pp. 2739 - 2750
Main Authors KOSWATTA, Siyuranga O, VALDES-GARCIA, Alberto, STEINER, Mathias B, LIN, Yu-Ming, AVOURIS, Phaedon
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2011
Subjects
Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Performance evaluation
High performance
Nanotube devices
Power gain
Carbon nanotubes
Ballistic transport
field-effect transistor (FET)
III-V compound
Nanoelectronics
Degradation
Cut off frequency
Field effect transistor
Simulation
RF
Energy dissipation
Graphene
Carbon nanotube (CNT)
Zero band gap semiconductors
Low-power electronics
High frequency
Current gain
Damaging
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ISSN:0018-9480
1557-9670