Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations : ATOMICALLY CONTROLLED FABRICATION

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 23; no. 39
Main Authors ARIMA, Kenta, ENDO, Katsuyoshi, YAMAUCHI, Kazuto, HIROSE, Kikuji, ONO, Tomoya, SANO, Yasuhisa
Format Journal Article
LanguageEnglish
Published Bristol Institute of Physics 2011
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Semiconductor materials
Chemical etching
Structural models
Surface structure
Scanning tunneling microscopy
Surface termination
Wet process
Silicon carbide
Aqueous solutions
Atomic arrangement
Chemical treatment
Density functional method
Silicon
Crystal faces
Formation mechanism
Passivation
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ISSN:0953-8984
1361-648X