AIN/GaN MOS-HEMTs With Thermally Grown Al2O3 Passivation

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 58; no. 5; pp. 1418 - 1424
Main Authors TAKING, Sanna, MACFARLANE, Douglas, WASIGE, Edward
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2011
Subjects
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Ternary compound
Performance evaluation
Binary compound
Ohmic contact
AIN/GaN
thermal oxidation
Small signal behavior
Oscillation frequency
wet etching
Al
metal-oxide-semiconductor (MOS)-HEMT
Gallium nitride
Optimization
O
AlGaN/GaN
Cut off frequency
High electron mobility transistor
III-VI compound
Direct current
Oxidation
MESA technology
Passivation
High strength current
high-electron mobility transistor (HEMT)
Aluminium nitride
MOS structure
small-signal model
Radiofrequency
III-V compound
Wet process
Equivalent circuit
Leakage current
Alumina
Current gain
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ISSN:0018-9383
1557-9646