Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications Group III Nitrides, SiC and ZnO

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Bibliographic Details
Published inJournal of electronic materials Vol. 40; no. 4; pp. 400 - 405
Main Authors VIRSHUP, Ariel, FANG LIU, LUKCO, Dorothy, BUCHHOLT, Kristina, LLOYD SPETZ, Anita, PORTER, Lisa M
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 2011
Subjects
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Electronics
Exact sciences and technology
Materials
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thermal stability; thermal effects
Scanning electron microscopy
Electric contacts
Oxide layer
Metallizing
Contact resistance
High temperature
Heat treatments
Nonstoichiometry
Thermal stability
AES
Thickness
Thermal properties
Specific heat
Lamellar structure
Silicon carbide
Transmission electron microscopy
Silicon oxides
Imaging
Nickel
Ohmic contacts
Reliability
Thermodynamic properties
IV characteristic
high-temperature reliability
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ISSN:0361-5235
1543-186X