Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates Group III Nitrides, SiC and ZnO

• Published in: Journal of electronic materials Vol. 40; no. 4; pp. 394 - 399
• Main Authors: SCAJEV, Patrik, HASSAN, Jawad, JARASIUNAS, Kęstutis, KATO, Masashi, HENRY, Anne, PEDER BERGMAN, J
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 2011
• Subjects: Charge carriers: generation, recombination, lifetime, trapping, mean free paths; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Defect density; Cubic lattices; Epitaxial layers; time-resolved optical techniques; Light diffraction; Photoinduced effect; Diffraction gratings; Defect recombination; Extended defects; Time resolved spectra; free carrier absorption; light-induced diffraction grating; CVD; Free carrier; Time resolution; Silicon carbide; carrier diffusion and mobility; Cubic silicon carbide; Carrier lifetime; Diffusion; Carrier mobility; Nonlinear optics; Comparative study
• ISSN: 0361-5235; 1543-186X