Strain investigations of wurtzite GaN by Raman phonon diagnostics with photoluminescence supplement

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Bibliographic Details
Published inJournal of crystal growth Vol. 189-90; pp. 634 - 638
Main Authors KLOSE, M, WIESER, N, ROHRA, G. C, DASSOW, R, SCHOLZ, F, OFF, J
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 1998
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Iii-v semiconductors
Mechanical and acoustical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Biaxial compression
Inorganic compounds
Epitaxial layers
Deformation
Semiconductor materials
Gallium nitrides
Doping
Photoluminescence
Binary compounds
Crystal growth from vapors
XRD
Experimental study
Thin films
Tensile stress
Raman scattering
MOVPE method
Wurtzite structure
III-V semiconductors
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ISSN:0022-0248
1873-5002