Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

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Bibliographic Details
Published inJournal of crystal growth Vol. 189-90; pp. 172 - 177
Main Authors KOBAYASHI, N. P, KOBAYASHI, J. T, CHOI, W.-J, DAPKUS, P. D, XINGANG ZHANG, RICH, D. H
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 1998
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Aluminium arsenides
Buffer layer
Atomic force microscopy
Inorganic compounds
Gallium nitrides
Roughness
Surfaces
Crystal growth from vapors
Cathodoluminescence
Experimental study
MOCVD
Monocrystals
Morphology
Growth mechanism
Oxidation
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ISSN:0022-0248
1873-5002