Growth and coalescence behavior of semipolar (1122) GaN on pre-structured r-plane sapphire substrates : Polarization-Field Control in Nitride Light Emitters

Saved in:
Bibliographic Details
Published inPhysica status solidi. B. Basic research Vol. 248; no. 3; pp. 588 - 593
Main Authors SCHWAIGER, Stephan, METZNER, Sebastian, KROST, Alois, CHRISTEN, Jürgen, SCHOLZ, Ferdinand, WUNDERER, Thomas, ARGUT, Ilona, THALMAIR, Johannes, LIPSKI, Frank, WIENEKE, Matthias, BIASING, Jürgen, BERTRAM, Frank, ZWECK, Josef
Format Journal Article
LanguageEnglish
Published Berlin Wiley-VCH 2011
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Vapor phase epitaxy; growth from vapor phase
Defect density
Scanning electron microscopy
Transmission electron microscopy
Crystal orientation
MOVPE method
Growth mechanism
XRD
Cathodoluminescence
Gallium nitride
Surface structure
Online AccessGet full text

Cover

More Information
ISSN:0370-1972
1521-3951