Development of Infrared Detectors Using Single Carbon-Nanotube-Based Field-Effect Transistors SPECIAL ISSUE ON DEVICE CONCEPTS, ARCHITECTURAL STRATEGIES, AND INTERFACING METHODOLOGIES FOR NANOSCALE SENSOR SYSTEMS

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 9; no. 5; pp. 582 - 589
Main Authors HONGZHI CHEN, NING XI, LAI, King W. C, FUNG, Carmen K. M, RUIGUO YANG
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2010
Subjects
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Integrated optoelectronics. Optoelectronic circuits
Molecular electronics, nanoelectronics
Optical and optoelectronic circuits
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Performance evaluation
High performance
Optoelectronics
Nanotube devices
Performance characteristic
Doping
Infrared detector
Carbon nanotubes
Photodetector
Open circuit voltage
Nanoelectronics
Field effect transistor
Singlewalled nanotube
Dark current
Optoelectronic device
Illumination
Carbon nanotube (CNT)
IR detector
field-effect transistor
Photoelectric current
Electrostatics
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ISSN:1536-125X
1941-0085