Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
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Published in | Semiconductor science and technology Vol. 25; no. 8 |
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Main Authors | , |
Format | Journal Article |
Language | Russian |
Published |
Bristol
Institute of Physics
2010
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Online Access | Get full text |
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ISSN: | 0268-1242 1361-6641 |
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