Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates Group III Nitrides, Silicon Carbide, and Zinc Oxide

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Bibliographic Details
Published inJournal of electronic materials Vol. 39; no. 5; pp. 608 - 611
Main Authors BEN-YAACOV, Tammy, IVE, Tommy, VAN DE WALLE, Chris G, MISHRA, Umesh K, SPECK, James S, DENBAARS, Steven P
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 2010
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Other semiconductors
Physics
Specific materials
Surface and interface electron states
Crystal growth
Doping
Hall effect
N type conductivity
Gallium nitride
Thin films
Template method
metalorganic chemical vapor deposition
Sheet resistivity
Zinc oxide
Nitrogen additions
electrical characterization
n-type
Electronic properties
ZnO:In
Electrical properties
Zinc additions
Oxide layer
Template reaction
Indium additions
Indium
MOCVD
Indium oxide
III-V compound
indium doping
Quantity ratio
Growth mechanism
ZnO
growth
Carrier density
III-V semiconductors
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ISSN:0361-5235
1543-186X