Activation energy values from the applications and materials science temperature dependence of silicon PN junction reverse current and its origin

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 207; no. 5; pp. 1252 - 1256
Main Authors OBREJA, Vasile V. N, OBREJA, Alexandru C
Format Journal Article
LanguageEnglish
Published Berlin Wiley-VCH 2010
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
MOSFET
Semiconductor materials
Temperature effect
p n junction
Bipolar transistor
Inverse problem
Transport process
Bias voltage
Arrhenius equation
Leakage current
Silicon
Activation energy
Interface
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ISSN:1862-6300
1862-6319