Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte 2009 International Electron Devices and Materials Symposium (IEDMS)

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 50; no. 5; pp. 643 - 646
Main Authors RAHAMAN, S. Z, MAIKAP, S
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 2010
Subjects
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Magnetic and optical mass memories
Power electronics, power supplies
Storage and reproduction of information
Switching, multiplexing, switched capacity circuits
Voltage threshold
Memory devices
Solid electrolyte
Electrical conductivity transitions
Power device
Retention factor
Power electronics
Selector switch
Low-power electronics
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ISSN:0026-2714
1872-941X