Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport THE STATE OF COMPUTATIONAL ELECTRONICS IN EUROPE

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Bibliographic Details
Published inJournal of computational electronics Vol. 8; no. 3-4; pp. 324 - 335
Main Authors QUERLIOZ, Damien, NGUYEN, Huu-Nha, SAINT-MARTIN, Jérôme, BOURNEL, Arnaud, GALDIN-RETAILLEAU, Sylvie, DOLLFUS, Philippe
Format Journal Article
LanguageEnglish
Published Heidelberg Springer 2009
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Diodes
Electronics
Exact sciences and technology
Materials science
Molecular electronics, nanoelectronics
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transport equation
Monte Carlo method
MOSFET
Resonant tunneling diodes
Boltzmann equation
Nanotube devices
Tunnel effect
Phonon
Carbon nanotubes
Quantum effect
Dual gate transistor
Modeling
Implementation
Nanoelectronics
Matrix element
Field effect transistor
Wigner function
Numerical simulation
Decoherence
Room temperature
Quantum transport
Monte Carlo simulation
Quantitative analysis
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ISSN:1569-8025
1572-8137