Direct band gap determination in AlxGa1-xAs epitaxial layers in the indirect gap region 0.4 < x < 0.9

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Bibliographic Details
Published inApplied surface science Vol. 123-24; pp. 513 - 516
Main Authors ARIZA-CALDERON, H, TIRADO-MEJIA, L, MENDOZA-ALVAREZ, J. G, TORRES-DELGADO, G
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier Science 1998
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Aluminium arsenides
Thin films
Energy gap
Gallium arsenides
Inorganic compounds
Quantity ratio
Reflection spectrum
Ternary compounds
Photoluminescence
Experimental study
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ISSN:0169-4332
1873-5584