Improved ohmic contact to n-type 4H and 6H-SiC using nichrome : III-V nitrides and silicon carbide

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Bibliographic Details
Published inJournal of electronic materials Vol. 27; no. 4; pp. 330 - 334
Main Authors LUCKOWSKI, E. D, DELUCCA, J. M, WILLIAMS, J. R, MOHNEY, S. E, BOZACK, M. J, ISAACS-SMITH, T, CROFTON, J
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 1998
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Contact resistance, contact potential
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Metal-nonmetal contacts
Physics
Gold
RBS
Semiconductor materials
Polytypism
Silicon carbides
Contact resistance
Experimental study
Metal-semiconductor contacts
Transition elements
Chromium
Nickel
Ohmic contacts
IV characteristic
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ISSN:0361-5235
1543-186X