Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors Group III Nitrides, SiC, and ZnO

• Published in: Journal of electronic materials Vol. 38; no. 4; pp. 569 - 573
• Main Authors: VIRSHUP, Ariel, PORTER, Lisa M, LUKCO, Dorothy, BUCHHOLT, Kristina, HULTMAN, Lars, SPETZ, Anita Lloyd
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 2009
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Contact resistance, contact potential; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Physics; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Contact resistance; High temperature; Thermal stability; Temperature sensors; Electron energy loss spectra; semiconductor contacts; Diesel engines; Depth profiles; stability; SiC contacts; Semiconductor materials; Silicides; degradation mechanism; Heat treatments; AES; Tantalum; Silicon carbide; EEL spectroscopy; nickel contacts; Nickel; Ohmic contacts; Reliability; Gas sensors; Concentration distribution; Thermal degradation
• ISSN: 0361-5235; 1543-186X