Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications 3D chip technology

Saved in:
Bibliographic Details
Published inIBM journal of research and development Vol. 52; no. 6; pp. 635 - 648
Main Authors JOSEPH, A. J, GILLIS, J. D, MCPARTLIN, M. J, DUNN, J, DOHERTY, M, LINDGREN, P. J, PREVITI-KELLY, R. A, MALLADI, R. M, WANG, P.-C, ERTURK, M, DING, H, GEBRESELASIE, E. G
Format Journal Article
LanguageEnglish
Published Armonk, NY International Business Machines 2008
Subjects
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Competitiveness
Microwave
Radiofrequency
Interoperability
BiCMOS technology
Inductance
Inelasticity
Tungsten
Wireless network
Feasibility
Power amplifier
Reliability
Plastics
Radio communication
Via hole
Online AccessGet full text

Cover

More Information
ISSN:0018-8646
2151-8556