Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

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Bibliographic Details
Published inIEEE electron device letters Vol. 29; no. 7; pp. 808 - 810
Main Authors BEDELL, Stephen W, MAJUMDAR, Amlan, OTT, John A, ARNOLD, John, FOGEL, Keith, KOESTER, Steven J, SADANA, Devendra K
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 2008
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Silicon on insulator technology
strain
High performance
MOSFET
p channel
State of the art
Silicon germanium on insulator technology
Hole mobility
Short channel
silicon-germanium-on- insulator (SGOI)
Germanium
Germanium on insulator technology
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ISSN:0741-3106
1558-0563