Comparison of phosphorus, arsenic and boron implants into bulk silicon and sos Material and process characterizeation for semiconductor device simulation

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Bibliographic Details
Published inSolid-state electronics Vol. 33; no. 6; pp. 651 - 654
Main Authors AMBERIADIS, K, KUMP, M. R, MAGEE, C. W
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Science 1990
Subjects
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Monte Carlo method
Microelectronic fabrication
Ion implantation
Arsenic Ions
Digital simulation
Boron Ions
Silicon
Experimental study
Comparative study
Silicon on sapphire technology
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ISSN:0038-1101
1879-2405