Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes

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Bibliographic Details
Published inSemiconductor science and technology Vol. 22; no. 5; pp. 502 - 510
Main Authors BULASHEVICH, K. A, MYMRIN, V. F, KARPOV, S. Yu, DEMIDOV, D. M, TER-MARTIROSYAN, A. L
Format Journal Article
LanguageRussian
Published Bristol Institute of Physics 2007
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ISSN:0268-1242
1361-6641