Open core threading dislocations in GaN grown by hydride vapour phase epitaxy 50 years of TEM of Dislocations

Saved in:
Bibliographic Details
Published inPhilosophical magazine (Abingdon, England) Vol. 86; no. 29-31; pp. 4747 - 4756
Main Authors CHERNS, D, HAWKRIDGE, M. E
Format Journal Article
LanguageEnglish
Published Abingdon Taylor and Francis 2006
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Defects and impurities in crystals; microstructure
Exact sciences and technology
Linear defects: dislocations, disclinations
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Structure of solids and liquids; crystallography
Vapor phase epitaxy; growth from vapor phase
Inorganic compounds
Gallium nitrides
Segregation
Thick films
Doping
Binary compounds
VPE
Hydrides
Crystal growth from vapors
Screw dislocations
Experimental study
Thin films
Image analysis
EEL spectroscopy
Stress distribution
Impurities
Kinetics
III-V semiconductors
Online AccessGet full text

Cover

More Information
ISSN:1478-6435
1478-6443