Sticking probability of the CN(X2Σ+) radicals onto the hydrogenated amorphous carbon nitride films
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| Published in | Thin solid films Vol. 506-07; pp. 715 - 719 |
|---|---|
| Main Authors | , , |
| Format | Conference Proceeding |
| Language | English |
| Published |
Lausanne
Elsevier Science
2006
|
| Subjects | |
| Online Access | Get full text |
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| Author | SAITOH, Hidetoshi ODA, Kouichi ITO, Hamhiko |
|---|---|
| Author_xml | – sequence: 1 givenname: Hamhiko surname: ITO fullname: ITO, Hamhiko organization: Department of Chemistry, Nagaoka University of Technology, Kamitomioka, Nagaoka 940-2188, Japan – sequence: 2 givenname: Kouichi surname: ODA fullname: ODA, Kouichi organization: Department of Chemistry, Nagaoka University of Technology, Kamitomioka, Nagaoka 940-2188, Japan – sequence: 3 givenname: Hidetoshi surname: SAITOH fullname: SAITOH, Hidetoshi organization: Department of Chemistry, Nagaoka University of Technology, Kamitomioka, Nagaoka 940-2188, Japan |
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| Keywords | Rayleigh scattering Pressure effects Plasma processing and deposition Films Laser induced fluorescence Chemical vapor deposition (CVD) Infrared spectra Experimental study Density CVD Growth from vapor Amorphous hydrogenated material Preparation Sticking coefficient Carbon nitrides PECVD Amorphous carbon nitride Microwave discharge |
| Language | English |
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| SubjectTerms | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Physics |
| Title | Sticking probability of the CN(X2Σ+) radicals onto the hydrogenated amorphous carbon nitride films |
| Volume | 506-07 |
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