Sticking probability of the CN(X2Σ+) radicals onto the hydrogenated amorphous carbon nitride films

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Bibliographic Details
Published inThin solid films Vol. 506-07; pp. 715 - 719
Main Authors ITO, Hamhiko, ODA, Kouichi, SAITOH, Hidetoshi
Format Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier Science 2006
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Rayleigh scattering
Pressure effects
Plasma processing and deposition
Films
Laser induced fluorescence
Chemical vapor deposition (CVD)
Infrared spectra
Experimental study
Density
CVD
Growth from vapor
Amorphous hydrogenated material
Preparation
Sticking coefficient
Carbon nitrides
PECVD
Amorphous carbon nitride
Microwave discharge
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ISSN:0040-6090
1879-2731