Intrinsic defects in GaN: what we are learning from magnetic resonance studies

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 340-42; pp. 25 - 31
Main Authors WATKINS, George D, CHOW, K. H, JOHANNESEN, P, VLASENKO, L. S, BOZDOG, C, ZAKRZEWSKI, A. J, MIZUTA, M, SUNAKAWA, H, KURODA, N, USUI, Akira
Format Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier 2003
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electrons and positron radiation effects
Exact sciences and technology
Magnetic double resonances and cross effects
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Optically detected magnetic resonance (odmr)
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids; crystallography
Radiation effects
Annealing
Inorganic compounds
Vacancies
Semiconductor materials
Gallium nitrides
Irradiation defect
Interstitials
Photoluminescence
ODEPR
Experimental study
Double resonance methods
Electron beams
GaN
Excitation spectrum
Electron paramagnetic resonance
ODMR
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ISSN:0921-4526
1873-2135