Fast neutron radiation effects in siicon detectors fabricated by different thermal oxidation processes

• Published in: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:4
• Main Authors: Li, Z., Kraner, H.W.
• Format: Conference Proceeding
• Language: English
• Published: United States 01.08.1992
• Subjects: 360605 - Materials- Radiation Effects; 440100 - Radiation Instrumentation; 663610 - Neutron Physics- (1992-); BARYONS; CAPACITORS; CHALCOGENIDES; CURRENTS; DAMAGING NEUTRON FLUENCE; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; FABRICATION; FAST NEUTRONS; FERMIONS; HADRONS; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTERACTIONS; JUNCTIONS; LEAKAGE CURRENT; LI-DRIFTED DETECTORS; LI-DRIFTED SI DETECTORS; MATERIALS SCIENCE; MEASURING INSTRUMENTS; MOS TRANSISTORS; NEUTRON FLUENCE; NEUTRONS; NUCLEAR PHYSICS AND RADIATION PHYSICS; NUCLEONS; OXIDES; OXYGEN COMPOUNDS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SI SEMICONDUCTOR DETECTORS; SILICON COMPOUNDS; SILICON OXIDES; TEMPERATURE RANGE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; TRANSISTORS
• ISSN: 0018-9499; 1558-1578

This paper reports on high resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975[degrees]C to 1200[degrees]C) that have been exposed to fast neutron irradiation up to the fluence of a few times 10[sup 14] n/cm[sup 2]. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p[sup +]-n[sup [minus]]-p[sup +] if n[sup [minus]] is not inverted to ;) or resistors (p[sup +]-p-[sup +] if inverted) have been introduced in this study in monitoring the possible type-inversion (n [yields] p) under high neutron fluence. No type-inversion in the material underneath SiO[sub 2] and the p[sup +] contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 10[sup 13] n/cm[sup 2]. However, it has been found that detectors made on higher temperature oxides (T [ge] 1100[degrees]C) exhibit less leakage current increase at high neutron fluence ([phi] [ge] 10[sup 13] n/cm[sup 2]).