Kinetics of the low pressure chemical vapor deposition of polycrystalline germanium-silicon alloys from SiH[sub 4] and GeH[sub 4]

• Published in: Journal of the Electrochemical Society Vol. 140:6
• Main Authors: Holleman, J., Verweij, J.F., Kuiper, A.E.T.
• Format: Journal Article
• Language: English
• Published: United States 01.06.1993
• Subjects: 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 400201 - Chemical & Physicochemical Properties; ALLOYS; CHEMICAL COATING; CHEMICAL COMPOSITION; CHEMICAL REACTION KINETICS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; CRYSTALS; DATA; DEPOSITION; DISSOCIATION; EQUATIONS; EXPERIMENTAL DATA; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; GERMANIUM HYDRIDES; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; KINETIC EQUATIONS; KINETICS; MATERIALS SCIENCE; NUMERICAL DATA; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; POLYCRYSTALS; REACTION KINETICS; SEPARATION PROCESSES; SILANES; SILICON ALLOYS; SILICON COMPOUNDS; SORPTION; SURFACE COATING; TEMPERATURE DEPENDENCE
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2221630

A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition from GeH[sub 4] and SiH[sub 4] assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the deposition kinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is 30 kJ/mol, lower compared to that of hydrogen to a silicon site. The authors found to a good approximation the GeSi composition of the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest deposition temperature they used, ie., 450C.