Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO{sub 2} Interface in a MOS Transistor

The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 53; no. 1
Main Authors Kulikov, N. A., Popov, V. D.
Format Journal Article
LanguageEnglish
Published United States 15.01.2019
Subjects
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
DOSE RATES
ELECTRIC POTENTIAL
GAMMA RADIATION
INTERFACES
MOS TRANSISTORS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
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Summary:The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
ISSN:1063-7826
1090-6479