Radiation Resistance of (HgSe){sub 3}(In{sub 2}Se{sub 3})

We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe){sub 3}(In{sub 2}Se{sub 3}) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe){sub 3}(In{sub 2}Se{sub 3}) with high-en...

Full description

Saved in:
Bibliographic Details
Published inRussian physics journal Vol. 61; no. 7
Main Authors Koziarskyi, I. P., Maslyuk, V. T., Maryanchuk, P. D., Maistruk, E. V., Koziarskyi, D. P., Megela, I. G., Lashkarev, G. V.
Format Journal Article
LanguageEnglish
Published United States 15.11.2018
Subjects
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
ELECTRONS
INDIUM SELENIDES
IRRADIATION
MAGNETIC SUSCEPTIBILITY
MERCURY SELENIDES
MEV RANGE
RADIATION DOSES
STOICHIOMETRY
VACANCIES
Online AccessGet full text

Cover

More Information
Summary:We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe){sub 3}(In{sub 2}Se{sub 3}) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe){sub 3}(In{sub 2}Se{sub 3}) with high-energy electrons (E{sub e} = 10 MeV, dose D = 10{sup 16} cm{sup –2}) has little effect on the electrophysical and magnetic properties, which indicates their high radiation resistance.
ISSN:1064-8887
1573-9228