The Effect of Charge Transport Mechanisms on the Efficiency of Al{sub x}Ga{sub 1 – x}As/GaAs Photodiodes

Photovoltaic characteristics of heterostructure Al{sub x}Ga{sub 1 – x}As/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power density of up to 200 W/cm{sup 2} at a wavele...

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Bibliographic Details
Published inTechnical physics letters Vol. 44; no. 11
Main Authors Kalinovskii, V. S., Kontrosh, E. V., Klimko, G. V., Tabarov, T. S., Ivanov, S. V., Andreev, V. M.
Format Journal Article
LanguageEnglish
Published United States 15.11.2018
Subjects
ALUMINIUM ARSENIDES
CHARGE TRANSPORT
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DARK CURRENT
EFFICIENCY
ELECTRIC POTENTIAL
ENERGY CONVERSION
EXCITATION
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
MONOCHROMATIC RADIATION
PHOTODIODES
PHOTOVOLTAIC EFFECT
POWER DENSITY
PULSES
SOLAR CELLS
SOLAR ENERGY
VISIBLE RADIATION
WAVELENGTHS
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Summary:Photovoltaic characteristics of heterostructure Al{sub x}Ga{sub 1 – x}As/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power density of up to 200 W/cm{sup 2} at a wavelength λ = 830 nm. A relationship was demonstrated between the “saturation currents” for the diffusion-related charge-transport mechanism (Shockley) in p–i–n photodiodes, calculated from dark current–voltage characteristics, and the experimental values of efficiency. As the “saturation current” of the diffusion-related charge-transport mechanism increases by an order of magnitude, a relative decrease in the efficiency from the maximum value by more than 10% is observed under excitation by constant or pulsed monochromatic light.
ISSN:1063-7850
1090-6533