Thermoelectric properties of the Mg{sub 2}Ge{sub 0.3}Sn{sub 0.7} solid solution with p-type conductivity

The thermoelectric properties of the Mg{sub 2}Ge{sub 0.3}Sn{sub 0.7} solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 10{sup 20} cm{sup –3} are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conducti...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 51; no. 8
Main Authors Isachenko, G. N., Samunin, A. Yu, Zaitsev, V. K., Gurieva, E. A., Konstantinov, P. P.
Format Journal Article
LanguageEnglish
Published United States 15.08.2017
Subjects
ABLATION
CHARGE CARRIERS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MATERIALS SCIENCE
SOLID SOLUTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THERMAL CONDUCTIVITY
THERMOELECTRIC PROPERTIES
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Summary:The thermoelectric properties of the Mg{sub 2}Ge{sub 0.3}Sn{sub 0.7} solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 × 10{sup 20} cm{sup –3} are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617080127