Quantum cascade laser based on GaAs/Al{sub 0.45}Ga{sub 0.55}As heteropair grown by MOCVD

A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al{sub 0.45}Ga{sub 0.55}As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm{sup -2}. The maximum output power of the laser with dim...

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Bibliographic Details
Published inQuantum electronics (Woodbury, N.Y.) Vol. 46; no. 5
Main Authors Zasavitskii, I I, Zubov, A N, Andreev, A Yu, Bagaev, T A, Gorlachuk, P V, Ladugin, M A, Padalitsa, A A, Lobintsov, A V, Sapozhnikov, S M, Marmalyuk, A A
Format Journal Article
LanguageEnglish
Published United States 31.05.2016
Subjects
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
GALLIUM ARSENIDES
LASERS
MIRRORS
POWER GENERATION
PULSES
QUANTUM SYSTEMS
THRESHOLD CURRENT
WAVELENGTHS
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Summary:A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al{sub 0.45}Ga{sub 0.55}As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm{sup -2}. The maximum output power of the laser with dimensions of 30 μm × 3 mm and with cleaved mirrors exceeded 200 mW. (lasers)
ISSN:1063-7818
DOI:10.1070/QEL16058