Deep Centers at the Interface in In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs Heterostructures

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 50; no. 3
• Main Authors: Domashevskaya, E. P., Mikhailyuk, E. A., Prokopova, T. V., Bezryadin, N. N.
• Format: Journal Article
• Language: English
• Published: United States 15.03.2016
• Subjects: CONCENTRATION RATIO; DEPOSITION; DIELECTRIC MATERIALS; ENERGY LEVELS; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM TELLURIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM TELLURIDES; INTERFACES; LAYERS; MATERIALS SCIENCE; RECOMBINATION

The methods of admittance, I–V, and C–V characteristics are used to investigate In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the inter...