Deep Centers at the Interface in In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs Heterostructures

The methods of admittance, I–V, and C–V characteristics are used to investigate In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the inter...

Full description

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 3
Main Authors Domashevskaya, E. P., Mikhailyuk, E. A., Prokopova, T. V., Bezryadin, N. N.
Format Journal Article
LanguageEnglish
Published United States 15.03.2016
Subjects
CONCENTRATION RATIO
DEPOSITION
DIELECTRIC MATERIALS
ENERGY LEVELS
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM TELLURIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM TELLURIDES
INTERFACES
LAYERS
MATERIALS SCIENCE
RECOMBINATION
Online AccessGet full text

Cover

More Information
Summary:The methods of admittance, I–V, and C–V characteristics are used to investigate In{sub 2x}Ga{sub 2(1–x)}Te{sub 3}/InAs and In{sub 2}Te{sub 3}/InAs heterostructures obtained by the technologies of quasi-closed volume and deposition. The spectrum of the distribution of local energy levels at the interface is established. A new acceptor center with an energy of 0.36 eV alongside the known donor level with an energy of 0.5 eV is found by the method of admittance. The acceptor-center concentration N{sub t} depends on the method of fabrication and technological modes. The kinetics of generation–recombination processes in the temperature range of 70–400 K does not affect the insulating properties of the In{sub 2}Te{sub 3} or In{sub 2x}Ga{sub 2(1–x)}Te{sub 3} (x ≈ 0.65) dielectric layer; therefore, the possibility of their use as heterostructures for field-effect transistors is demonstrated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616030076