High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics

Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device perform...

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Bibliographic Details
Published inAIP advances Vol. 6; no. 5
Main Authors Hong, Young Ki, Kwon, Junyeon, Hong, Seongin, Song, Won Geun, Liu, Na, Omkaram, Inturu, Kim, Sunkook, Yoo, Geonwook, Yoo, Byungwook, Oh, Min Suk, Ju, Sanghyun
Format Journal Article
LanguageEnglish
Published United States 15.05.2016
Subjects
ALUMINIUM
CLATHRATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
DIFFUSION BARRIERS
ELECTRODES
LAYERS
MOBILITY
MOLYBDENUM
MOLYBDENUM SULFIDES
SCHOTTKY BARRIER DIODES
SILICON OXIDES
THIN FILMS
TRANSISTORS
WORK FUNCTIONS
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Summary:Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS{sub 2} TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS{sub 2} and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4953062