Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation te...

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Bibliographic Details
Published inJournal of applied physics Vol. 119; no. 15
Main Authors Ozcan, Ahmet S., Lavoie, Christian, Jordan-Sweet, Jean, Alptekin, Emre, Zhu, Frank, Leith, Allen, Pfeifer, Brian D., LaRose, J. D., Russell, N. M.
Format Journal Article
LanguageEnglish
Published United States 21.04.2016
Subjects
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONNECTORS
CONTROL
EPITAXY
GERMANIUM SILICIDES
INTERFACES
ION BEAMS
ION IMPLANTATION
ION PAIRS
LAYERS
NICKEL SILICIDES
NUCLEATION
PLATINUM SILICIDES
X RADIATION
X-RAY DIFFRACTION
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Summary:We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4947054