Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films

A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X...

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Bibliographic Details
Published inAIP advances Vol. 5; no. 11
Main Authors Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, LaBella, Vincent P.
Format Journal Article
LanguageEnglish
Published United States 15.11.2015
Subjects
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC CONDUCTIVITY
FLOW RATE
LATTICE PARAMETERS
MATERIALS SCIENCE
NITROGEN
REFLECTIVITY
SILICON
SILICON NITRIDES
SUBSTRATES
THIN FILMS
TUNGSTEN
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:A technique to deposit 5-20 nm thick β-phase W using a 2-second periodic pulse of 1 sccm-N{sub 2} gas on Si(001) and SiN(5 nm)/Si(001) substrates is reported. Resistivity, X-ray photoelectron spectroscopy and X-ray reflectivity were utilized to determine phase, bonding and thickness, respectively. X-ray diffraction patterns were utilized to determine the crystal structure, lattice constant and crystal size using the LeBail method. The flow rate of Nitrogen gas (continuous vs. pulsing) had significant impact upon the crystallinity and formation of β-phase W.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4935372