Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a...

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Bibliographic Details
Published inJournal of applied physics Vol. 116; no. 21
Main Authors Shinde, Sachin M., Tanemura, Masaki, Kalita, Golap, Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555
Format Journal Article
LanguageEnglish
Published United States 07.12.2014
Subjects
CHEMICAL VAPOR DEPOSITION
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CRYSTALS
DIELECTRIC MATERIALS
ELECTRODES
ELECTRONIC EQUIPMENT
FABRICATION
GRAPHENE
LAYERS
MEMORY DEVICES
METHACRYLIC ACID ESTERS
MOLYBDENUM OXIDES
MOLYBDENUM SULFIDES
NANOSCIENCE AND NANOTECHNOLOGY
PMMA
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4903552