Pulsed electrodeposition and characterization of Bi{sub 2}Te{sub 3−y}Se{sub y} films

• Published in: Materials research bulletin Vol. 47; no. 11
• Main Authors: Zou, Z.G., Cai, K.F., State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, Chen, S., Qin, Z.
• Format: Journal Article
• Language: English
• Published: United States 15.11.2012
• Subjects: BISMUTH TELLURIDES; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; GRAIN SIZE; MATERIALS SCIENCE; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMOELECTRIC PROPERTIES; X-RAY DIFFRACTION
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/J.MATERRESBULL.2012.07.036

Highlights: ► Bi{sub 2}Te{sub 3−y}Se{sub y} films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. -- Abstract: Bi{sub 2}Te{sub 3−y}Se{sub y} films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi{sub 2}Te{sub 3−y}Se{sub y} films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi{sub 2}Te{sub 3−y}Se{sub y} film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92 μV/K and electrical resistivity in the range of 102.9–109.4 μΩ m. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.