Synchrotron study of the formation of nanoclusters in Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanostructures

Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation o...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 10
Main Authors Turishchev, S. Yu, Terekhov, V. A., Koyuda, D. A., Pankov, K. N., Ershov, A. V., Grachev, D. A., Mashin, A. I., Domashevskaya, E. P.
Format Journal Article
LanguageEnglish
Published United States 15.10.2013
Subjects
ABSORPTION
ABSORPTION SPECTROSCOPY
ALUMINIUM OXIDES
ALUMINIUM SILICATES
INTERACTIONS
LAYERS
MATERIALS SCIENCE
NANOSTRUCTURES
PHOTOLUMINESCENCE
SILICON OXIDES
SPECTRA
SYNCHROTRON RADIATION
X RADIATION
X-RAY SPECTROSCOPY
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Summary:Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261310028X