Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor

Abstract Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have a...

Full description

Saved in:
Bibliographic Details
Published inNature communications Vol. 14; no. 1
Main Authors Shi, Jiaojian, Xu, Haowei, Heide, Christian, HuangFu, Changan, Xia, Chenyi, de Quesada, Felipe, Shen, Hongzhi, Zhang, Tianyi, Yu, Leo, Johnson, Amalya, Liu, Fang, Shi, Enzheng, Jiao, Liying, Heinz, Tony, Ghimire, Shambhu, Li, Ju, Kong, Jing, Guo, Yunfan, Lindenberg, Aaron M.
Format Journal Article
LanguageEnglish
Published United Kingdom Nature Publishing Group 16.08.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Abstract Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and certain topological properties, such as the Berry curvature and the quantum metric tensor, have attracted considerable interest. Here, we report giant room-temperature nonlinearities in non-centrosymmetric two-dimensional topological materials—the Janus transition metal dichalcogenides in the 1  T’ phase, synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently show orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities in 1  T’ MoSSe (e.g., > 50 times higher than 2 H MoS 2 for 18 th order harmonic generation; > 20 times higher than 2 H MoS 2 for terahertz emission). We link this giant nonlinear optical response to topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and heralds the applications of topological materials in optoelectronics down to the monolayer limit.
Bibliography:AC02-76SF00515; DE‐SC0020042; SC0020042; N00014-17-1-2661; 52272164
USDOE
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
National Natural Science Foundation of China (NSFC)
Office of Naval Research MURI
ISSN:2041-1723
2041-1723