Structural and optical properties of thin In{sub 2}O{sub 3} films produced by autowave oxidation

Cubic-phase In{sub 2}O{sub 3} films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20-40 nm. The opti...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 4
Main Authors Tambasov, I. A., Myagkov, V. G., Ivanenko, A. A., Nemtsev, I. V., Bykova, L. E., Bondarenko, G. N., Mihlin, J. L., Maksimov, I. A., Ivanov, V. V., Balashov, S. V., Karpenko, D. S.
Format Journal Article
LanguageEnglish
Published United States 15.04.2013
Subjects
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
GRAIN SIZE
INDIUM OXIDES
MATERIALS SCIENCE
OPACITY
OXIDATION
PHOTOELECTRON SPECTROSCOPY
THICKNESS
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Summary:Cubic-phase In{sub 2}O{sub 3} films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20-40 nm. The optical and electrical properties are studied for In{sub 2}O{sub 3} films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 Multiplication-Sign 10{sup -2} {Omega} cm.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613040210