The effect of irradiation with electrons on the electrical parameters of Hg{sub 3}In{sub 2}Te{sub 6}

The results of studying the electrical properties of Hg{sub 3}In{sub 2}Te{sub 6} crystals irradiated with electrons with the energy E{sub e} = 18 MeV and the dose D = 4 Multiplication-Sign 10{sup 16} cm{sup -2} are reported. It is shown that, irrespective of the charge-carrier concentration in the i...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 46; no. 3
Main Authors Grushka, O. G., Maslyuk, V. T., Chupyra, S. M., Mysliuk, O. M., Bilichuk, S. V., Zabolotskiy, I. I.
Format Journal Article
LanguageEnglish
Published United States 15.03.2012
Subjects
CHARGE CARRIERS
CRYSTALS
DOSES
ELECTRICAL PROPERTIES
ELECTRONS
FERMI LEVEL
IRRADIATION
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
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Summary:The results of studying the electrical properties of Hg{sub 3}In{sub 2}Te{sub 6} crystals irradiated with electrons with the energy E{sub e} = 18 MeV and the dose D = 4 Multiplication-Sign 10{sup 16} cm{sup -2} are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg{sub 3}In{sub 2}Te{sub 6} samples acquire the charge-carrier concentration (1.6-1.8) Multiplication-Sign 10{sup 13} cm{sup -3} after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg{sub 3}In{sub 2}Te{sub 6} crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at T > 260 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612030128