Substrate effect on in-plane dielectric and microwave properties of Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} thin films

The microstructure and in-plane dielectric and microwave properties of Barium tin titanate Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} (BTS) thin films grown on (1 0 0) LaAlO{sub 3} and (1 0 0) MgO single-crystal substrates through sol-gel process were investigated. X-ray diffraction and field emission sca...

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Bibliographic Details
Published inMaterials research bulletin Vol. 43; no. 8-9
Main Authors Song, S.N., Zhai, J.W., Yao, X.
Format Journal Article
LanguageEnglish
Published United States 04.08.2008
Subjects
ALUMINATES
BARIUM COMPOUNDS
CAPACITORS
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
GHZ RANGE 01-100
LANTHANUM COMPOUNDS
MAGNESIUM OXIDES
MATERIALS SCIENCE
MICROSTRUCTURE
MICROWAVE RADIATION
MONOCRYSTALS
SCANNING ELECTRON MICROSCOPY
SOL-GEL PROCESS
STRESSES
THERMAL EXPANSION
THIN FILMS
TIN COMPOUNDS
TITANATES
X-RAY DIFFRACTION
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Summary:The microstructure and in-plane dielectric and microwave properties of Barium tin titanate Ba(Sn{sub 0.15}Ti{sub 0.85})O{sub 3} (BTS) thin films grown on (1 0 0) LaAlO{sub 3} and (1 0 0) MgO single-crystal substrates through sol-gel process were investigated. X-ray diffraction and field emission scanning electron microscopy were used to characterize crystal structure of phases and microstructure of the thin films, respectively. Microwave properties of the films were measured from 1 to 10 GHz by the interdigital capacitor configuration. The obvious differences in the dielectric and microwave properties are attributed to the stress in the films, which result from the lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2007.08.006