Physical properties of SnO{sub 2} films subjected to incoherent pulsed radiation

The results of studying the electrical properties of thin SnO{sub 2} films grown by reactive magnetron deposition are reported. The film crystallization under the exposure to intense incoherent pulsed radiation was studied using a UOL.P-1 commercial setup. It was shown that short pulsed annealing fo...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 40; no. 1
Main Authors Rembeza, S. I., Rembeza, E. S., Svistova, T. V., Borsyakova, O. I.
Format Journal Article
LanguageEnglish
Published United States 15.01.2006
Subjects
ANNEALING
CRYSTALLIZATION
DEPOSITION
ELECTRICAL PROPERTIES
INTERACTIONS
MAGNETRONS
MATERIALS SCIENCE
POLYCRYSTALS
PULSED IRRADIATION
SENSITIVITY
TIN OXIDES
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Summary:The results of studying the electrical properties of thin SnO{sub 2} films grown by reactive magnetron deposition are reported. The film crystallization under the exposure to intense incoherent pulsed radiation was studied using a UOL.P-1 commercial setup. It was shown that short pulsed annealing for fractions of second causes crystallization of the film and high gas sensitivity. It was found that the interaction of the polycrystalline film treated isothermally with gases is similar to that of films crystallized by pulsed annealing.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378260601009X