Photoelectric properties of In/In{sub 2}Se{sub 3} structures

The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3....

Full description

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 41; no. 1
Main Authors Il'chuk, G. A., Kus'nezh, V. V., Petrus', R. Yu, Rud', V. Yu, Rud', Yu. V., Ukrainets, V. O.
Format Journal Article
LanguageEnglish
Published United States 15.01.2007
Subjects
ABSORPTION
CRYSTALLIZATION
EV RANGE 01-10
INDIUM
INDIUM SELENIDES
MATERIALS SCIENCE
MONOCRYSTALS
PHOTONS
Online AccessGet full text

Cover

More Information
Summary:The hexagonal modification of In{sub 2}Se{sub 3} single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In{sub 2}Se{sub 3}, which are photosensitive in a wide incident-photon energy range of 1-3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607010125