AlGaN High Electron Mobility Transistor for High Temperature Logic
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Main Authors | , , , , , , , , , , , , , |
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Format | Conference Proceeding |
Language | English |
Published |
United States
01.06.2022
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Online Access | Get full text |
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Bibliography: | NA0003525 SAND2022-8574C USDOE National Nuclear Security Administration (NNSA) |
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ISSN: | 1551-4897 |