The Gaussian nature of the band-edge of ZnO microcrystalline thin films

• Published in: AIP advances Vol. 12; no. 12
• Main Authors: Canul, Amrah, Lukman, Isiaka, Bergman, Leah
• Format: Journal Article
• Language: English
• Published: United States American Institute of Physics (AIP) 02.12.2022
• Subjects: Annealing; Magnetron sputtering; MATERIALS SCIENCE; Optical absorption; Phonons; Semiconductor analysis; Thin films; Transmission spectroscopy
• ISSN: 2158-3226; 2158-3226

A straightforward analytical approach based on the derivative of the absorption coefficient is presented, which enables probing the nature of the band edge (BE) of ZnO microcrystalline films. The study was conducted via transmission experiments at temperatures of 77–532 K and repeated for samples annealed up to 1073 K. It was found that the derivative of the natural log of the BE absorption coefficient resulted in a Gaussian function. The Gaussian linewidth is used in the electron–phonon (e–p) interaction model to characterize the defect-state of the films. The BE of the as-grown film was found to exhibit no thermal dependence and no e–p coupling, indicative of a disordered crystal. Upon annealing and improvement of the film quality, the thermal phonons became more activated, but only above room temperature with a phonon energy of ∼75 meV, while up to room temperature, the impact of phonons on the BE is insignificant. A disorder–order transition was determined to take place at an annealing temperature of ∼673 K. X-ray diffraction concurs with these results. The study indicates that the prevalent defects are of structural nature due to the inherent granular morphology of the films. This defect was found to dominate the behavior of the BE even at the elevated temperature regime rather than thermal phonons.