Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices

• Published in: Nano letters Vol. 16; no. 11
• Main Authors: Wang, Guocai, Bao, Lihong, Pei, Tengfei, Ma, Ruisong, Zhang, Yu-Yang, Sun, Liling, Zhang, Guangyu, Yang, Haifang, Li, Junjie, Gu, Changzhi, Du, Shixuan, Pantelides, Sokrates T., Schrimpf, Ronald D., Gao, Hong-jun
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 11.10.2016
• Subjects: Diodes; Heat transfer; Layers; NANOSCIENCE AND NANOTECHNOLOGY; Organic compounds; Thermodynamic modeling
• ISSN: 1530-6984; 1530-6992

The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in two-dimensional materials substitutional doping has been achieved in only a few systems, such as Nb substitutional doping in MoS2. Surface charge transfer is still one of the popular ways to control whether the conduction is dominated by holes or electrons. Here, we demonstrate that a capping layer of cross-linked poly(methyl methacrylate) modifies the potential in a black phosphorus (BP) layer so that conduction in the absence of an external electric field is dominated by electrons, rather than holes. Using this technique to form adjoining regions dominated by hole and electron conduction, a family of novel planar devices, such as BP-gated diodes, BP bidirectional rectifier, and BP logic inverters, can be fabricated. The devices are potentially useful for electronic applications, including rectification and switching.