Response Variability in Commercial MOSFET SEE Qualification

• Published in: IEEE transactions on nuclear science Vol. 64; no. 1
• Main Authors: George, J. S., Clymer, D. A., Turflinger, T. L., Mason, L. W., Stone, S., Koga, R., Beach, E., Huntington, K., Lauenstein, J. -M., Titus, J., Sivertz, M.
• Format: Journal Article
• Language: English
• Published: United States IEEE 01.12.2016
• Subjects: Failure distribution; Gaussian distribution; Guidelines; Histograms; Logic gates; MOSFET; PARTICLE ACCELERATORS; Qualifications; Semiconductor optical amplifiers; single-event burnout; trench
• ISSN: 0018-9499; 1558-1578

Single-event effects (SEE) evaluation of five different part types of next generation, commercial trench MOSFETs indicates large part-to-part variation in determining a safe operating area (SOA) for drain-source voltage (VDS) following a test campaign that exposed >50 samples per part type to heavy ions. These results suggest a determination of a SOA using small sample sizes may fail to capture the full extent of the part-to-part variability. An example method is discussed for establishing a Safe Operating Area using a one-sided statistical tolerance limit based on the number of test samples. Finally, burn-in is shown to be a critical factor in reducing part-to-part variation in part response. Implications for radiation qualification requirements are also explored.